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FMA3058
2-20 GHZ BROADBAND MMIC AMPLIFIER
FEATURES:
* * * * * * * * 15dB Gain Low Noise Amplifier Single Supply (Self Biased +5V @ 90mA) 12 dBm P1dB Output Power at 20GHz pHEMT Technology Bias Control Input Return Loss < -12 dB Output Return Loss < -10 dB
Pilot Datasheet v2.5
FUNCTIONAL SCHEMATIC:
VDD
RF Input
RF Output
GENERAL DESCRIPTION:
The FMA3058 is a high performance 2-20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation and electronic warfare applications. The die is fabricated using the Filtronic 0.25m process. The Circuit is DC blocked at both the RF input and the RF output.
TYPICAL APPLICATIONS:
* * * * Test Instrumentation Electronic Warfare Broadband Communication Infrastructure Fiber Optics
ELECTRICAL SPECIFICATIONS (SMALL-SIGNAL UNLESS OTHERWISE STATED):
PARAMETER
Small Signal Gain Gain Flatness Input Return Loss Output Return Loss Output Power at 1dB compression point
CONDITIONS
2-20 GHz 2-20 GHz 2-20 GHz 2-20 GHz 2 GHz, 5V drain bias 10 GHz, 5V drain bias 20 GHz, 5V drain bias
MIN
- - - - - - - - - - -
TYP
15 - -12 -10 18 18 15 90 3.5 3 6.5
MAX
- 3 - - - - - - - - -
UNITS
dB dB dB dB dBm dBm dBm mA dB dB dB
Drain Current Noise Figure
5V drain bias 2 GHz, 5V drain bias 10 GHz, 5V drain bias 20 GHz, 5V drain bias
Note: TAMBIENT = +25C, Z0 = 50 Pads B and C open circuit
DIFFERENT BIAS CONFIGURATIONS:
The device has a default current, set by an on chip resistor. Pads B and C can be bonded to ground to increase the device current by reducing the default resistance.
1
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
FMA3058
Pilot Datasheet v2.5
ABSOLUTE MAXIMUM RATINGS:
PARAMETER
Max Input Power Drain Voltage Total Power Dissipation Thermal Resistivity Operating Temp Storage Temp
SYMBOL
Pin VDD
ABSOLUTE MAXIMUM
+20dBm +12V
PAD REF
A B C
PAD NAME
IN R2 R1 OUT GND VD VG
DESCRIPTION
RF Input Internal Source Bias Resistor Internal Source Bias Resistor RF Output Ground Drain voltage Optional Gate Voltage
Ptot JC Toper Tstor
TBD
D E F G
TBD -55C to +85C -55C to +150C
Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device.
PAD LAYOUT:
1.500 1.443 1.369
0.050 0.134 0.185 0.269
GFE
2.966 3.066
D
1.141 1.041 0.506 0.422 0.385 0.301
0.530 0.430 0 REF
A
C B
Dimensions in mm. 0 REF 0.054 0.154 2.914 2.988
2
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
3.120
FMA3058
Pilot Datasheet v2.5
TYPICAL PERFORMANCE ON-WAFER:
Note: Measurement Conditions ID= 90 mA, VDD= 5 V, TAMBIENT = 25C, Pads B and C open circuit.
Gain 20.00 18.00 16.00 14.00 12.00 10.00 8.00 6.00 4.00 2.00 0.00 2 4 6 8 10 12 14 16 18 20 Frequency (GHz)
0.00 -10.00 -20.00 S12 (dB) -30.00 -40.00 -50.00 -60.00 -70.00 2 4 6
Reverse Isolation
S21 (dB)
8
10
12
14
16
18
20
Frequency (GHz)
Input return Loss 0.00 -5.00 -10.00 S11 (dB)
S22 (dB) 0.00 -5.00 -10.00 -15.00 -20.00 -25.00 -30.00 -35.00 -40.00
Output return Loss
-15.00 -20.00 -25.00 -30.00 -35.00 -40.00 2 4 6 8 10 12 14 16 18 20 Frequency (GHz)
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
Noise Figure 8 7 Noise Figure (dB) 6 5 4 3 2 1 0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz)
P1dB 20 18 16 14 12 10 8 6 4 2 0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz)
3
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
P1dB (dBm)
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
FMA3058
Pilot Datasheet v2.5
TYPICAL PERFORMANCE ON-WAFER OVER TEMPERATURE:
Note: Measurement Conditions ID= 90 mA, VDD= 5 V, Pads B and C open circuit.
TAMBIENT = 25C
TCOLD = -55C
THOT = +85C
Gain 20.00 18.00 16.00 14.00 12.00 10.00 8.00 6.00 4.00 2.00 0.00 2 4 6 8 10 12 14 16 18 20 Frequency (GHz)
0.00 -10.00 -20.00 S12 (dB) -30.00 -40.00 -50.00 -60.00 -70.00 2 4 6
Reverse Isolation
S21 (dB)
8
10
12
14
16
18
20
Frequency (GHz)
Input Return Loss 0.00 -5.00 -10.00 S11 (dB)
S22 (dB) 5.00 0.00 -5.00 -10.00 -15.00 -20.00 -25.00 -30.00 -35.00 -40.00
Output Return Loss
-15.00 -20.00 -25.00 -30.00 -35.00 -40.00 2 4 6 8 10 12 14 16 18 20 Frequency (GHz)
0
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
P1dB 20 18 16 14 12 10 8 6 4 2 0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) P1dB (dBm)
4
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
FMA3058
Pilot Datasheet v2.5
BIASING CIRCUIT SCHEMATIC:
VDD 100pF 100nF
RF Output
RF Input
ASSEMBLY DIAGRAM:
It is recommended that the RF connections be made using bond wires with 25m diameter and a maximum length of 300m. Ground connections should be made according to the required bias conditions.
To Evaluation Board via an 0402 Surface Mounted capacitor (100nF)
100pF Chip Capacitor
Ground connection
User application
50 Ohms line
50 Ohms line
User application
BILL OF MATERIALS:
COMPONENT
All RF tracks should be 50 characteristic material Capacitor, 100pF, chip capacitor Capacitor, 100nF, 0402
5
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
FMA3058
Pilot Datasheet v2.5
PREFERRED ASSEMBLY INSTRUCTIONS:
GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The recommended die attach is gold/tin eutectic solder under a nitrogen atmosphere. Stage temperature should be 280-290C; maximum time at temperature is one minute. The recommended wire bond method is thermo-compression wedge bonding with 0.7 or 1.0 mil (0.018 or 0.025 mm) gold wire. Stage temperature should be 250-260C. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimised especially when making RF or ground connections.
ORDERING INFORMATION:
PART NUMBER
FMA3058-000-WP (Gel-pak available on request)
DESCRIPTION
Die in Waffle-pack
HANDLING PRECAUTIONS:
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 0 (0-250 V) as defined in JEDEC Standard No. 22-A114. Further information on ESD control measures can be found in MIL-STD-1686 and MILHDBK-263.
APPLICATION NOTES & DESIGN DATA:
Application Notes and design data including Sparameters are available on request.
DISCLAIMERS:
This product is not designed for use in any space based or life sustaining/supporting equipment.
6
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com

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